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Gallium

半導体材料

Gallium Ga · 31

A silvery metal that melts in your hand, and the basis of the compound semiconductors in fast chargers, radar and LEDs.

Plastic bottle containing gallium metal · Pixelmaniac pictures ( Leave a reply ) · CC0 · Wikimedia Commons

これは何か

A silvery metal that melts in your hand, and the basis of the compound semiconductors in fast chargers, radar and LEDs.

なぜ重要なのか

Gallium nitride switches far faster than silicon, which is why it appears in phone chargers, 5G base stations, radar and satellite power systems.

Where it is in the Earth

Gallium is not a mineral in its own right. Unlike copper or gold, which form discrete ore minerals that can be selectively concentrated, gallium exists only as a trace impurity lodged inside the crystal structures of other minerals. The two host minerals that matter commercially are gibbsite and boehmite — the aluminium hydroxide and oxyhydroxide minerals that make up bauxite — and sphalerite, the zinc sulfide mineral that is the world's principal source of zinc. In both cases, gallium atoms substitute for aluminium or zinc atoms in the crystal lattice because their ionic radii are similar enough to allow the substitution. The concentrations involved are minute: gallium in bauxite is typically measured in parts per million relative to the aluminium present.

Bauxite forms in tropical and subtropical climates through a process called laterisation. When aluminium-bearing rocks are subjected to intense weathering over long periods, silica and most other elements are progressively leached away, leaving a residue enriched in aluminium hydroxide minerals. Because gallium behaves geochemically similarly to aluminium, it concentrates alongside aluminium during this weathering. The result is that wherever thick, high-aluminium bauxite deposits formed — across West Africa, Australia, the Caribbean and parts of South-East Asia — gallium is also present, albeit at trace levels. The same laterisation process that creates commercial bauxite is therefore the same process that creates any future gallium resource, even though gallium was never the target.

Sphalerite deposits, by contrast, form in entirely different geological settings: hydrothermal veins and sediment-hosted massive sulfide bodies, where metal-bearing fluids circulated through the crust and deposited zinc, lead and iron sulfides. Gallium follows zinc into sphalerite for the same substitution reasons, and some zinc districts carry appreciably higher gallium concentrations than others, though the variation is poorly characterised in public literature. The global distribution of gallium therefore mirrors the combined geography of bauxite and zinc deposits, but the amount recoverable depends on what happens in the processing plant, not in the mine.

Getting it out

Because gallium has no mine of its own, the question of how it is mined has no direct answer. The bauxite that carries most of the world's gallium is extracted by open-pit mining: the thin topsoil and clay overburden above the bauxite horizon is stripped away, the ore is dug out with excavators and shovels, and it is trucked or conveyor-belted to a crushing facility. The operations are large and relatively shallow. The gallium content of the bauxite is not a factor in the mining decision at all — the mine exists for aluminium, and gallium comes along for the ride.

What this means in practice is that the quantity of gallium potentially available to the world is enormous, dwarfing what is actually recovered. Every tonne of bauxite processed through an alumina refinery contains some gallium, but that gallium is only captured if the refinery is equipped to extract it and the economics make doing so worthwhile. Most refineries, historically, have not bothered. The same logic applies to zinc smelters processing sphalerite concentrates: gallium is present in the feed material, but recovering it requires additional processing steps that most smelters do not operate. The effective grade of gallium as a recoverable product is therefore determined more by refinery configuration and operating decisions than by the geological grade of the host ore.

There is no waste-rock calculation for gallium in the way there would be for a primary metal mine. The host ore — bauxite or zinc sulfide — is moved and processed regardless. Gallium recovery is an incremental activity layered on top of an existing industrial process, which is both its economic advantage and the source of its structural vulnerability.

What pulls on it

The applications that consume gallium all depend on the same underlying property: gallium forms compound semiconductors — most importantly gallium arsenide (GaAs) and gallium nitride (GaN) — with electronic and optical characteristics that silicon cannot replicate. Silicon remains the dominant material for general-purpose computing, but it struggles at high frequencies, high temperatures and at the wavelengths used in light emission. Gallium-based compounds handle all three better. GaN transistors switch far faster and at higher voltages than silicon equivalents, which is why GaN has become the material of choice for power conversion in compact chargers, for the amplifiers inside 5G base stations and for the transmit-receive modules in radar systems. GaAs remains important for radio-frequency front-end components in mobile handsets and for solar cells used in space, where its high efficiency per unit area justifies the cost premium over silicon.

The end markets listed for gallium span a wide range, but they share a common thread: they are all situations where the performance gap between gallium compounds and silicon justifies the higher material cost. LEDs and laser diodes rely on gallium compounds for light emission — silicon does not emit light efficiently because of the way its electronic band structure is arranged. CIGS thin-film solar cells use gallium as a dopant to tune the semiconductor's light-absorption characteristics. As power electronics migrate toward higher frequencies and higher power densities — driven by electrification, data centre efficiency requirements and defence electronics — the applications pulling on gallium tend to grow rather than shrink.

A sharp change in demand would most plausibly come from one of two directions. The first is a faster-than-expected adoption of GaN in power electronics and 5G infrastructure, pulling demand up. The second is a technological shift that reduces the gallium content per device — as has happened historically when manufacturers found ways to thin wafers or recover and reuse kerf losses from wafer slicing. The defence and radar segment is relatively insensitive to material cost and would be among the last to substitute away. Consumer electronics are more price-sensitive but have few practical alternatives at the frequencies involved.

数値の読み方に注意してください。 Primary low-grade gallium production; recovered as a by-product of alumina refining and zinc processing. Low-grade metal, refined 6N/7N metal, then GaAs and GaN wafers.

岩石中の産出箇所

全鉱石鉱物 →

実際に以下を担う鉱物 gallium. 鉱床が鉱体となるのは、採掘コストを回収できるほど十分な濃度で鉱石が濃集している場合に限られる。

Primary production

Primary productionkilograms 2025 (推定値) 世界合計 900,000 kilograms

USGS Mineral Commodity Summaries 2026 · Primary low-grade gallium production; recovered as a by-product of alumina refining and zinc processing. · 出典 ↗

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生産 世界に占める割合
China 900,000 100.0%
Russia 6,000 0.7%
Japan 3,000 0.3%
Other countries Zero
United States Zero
世界合計 900,000100%

「非開示」とは、個別企業のデータが特定されないようUSGSが数値を公表しなかったことを意味し、ゼロを意味するものではありません。出典が各数値を独立して丸め処理しており、「その他の国」の内訳を常に示しているわけではないため、各国の数値の合計が世界合計と一致しないことがあります。

価格

average unit value of imports, dollars per kilogram

年間平均dollars per kilogram

2021 · 277.0 高 580.0 dollars per kilogram 2025 · 580.0

基準: average unit value of imports, dollars per kilogram. 以下に公表された年間平均値: USGS Mineral Commodity Summaries 2026 · 出典 ↗. これらは参照用の年間平均値であり、リアルタイムの市況相場ではない。

処理・精製が行われる場所

プラント種別 ステージ役割
Bayer-Process Alumina Refineries, Western Australia 精製所処理 Australia産出物
最終市場そこでの機能重要度
Aerospace & Defence Radar transmit-receive modules 定義
Semiconductors Compound semiconductors for RF and power 定義
Data Centres & AI High-efficiency power conversion 重要
Consumer Electronics LED backlighting and RF front end 重要
Robotics & Automation Efficient motor drive electronics 重要
Solar Power CIGS thin film and cell doping 現在

技術が必要とする量

「インテンシティ」とは、ある製品1単位に含まれる素材の量を指します。ここに示す値は参考レンジであり、実際の設計はメーカーやモデル年によって異なります。また、エンジニアが使用量を削減する技術を習得するにつれ、いずれの値も低下し続けています。
技術数量 建値基準
Gallium Nitride Power Device Grams; the constraint is refining capacity, not tonnage. 微量 per deviceSubstrate and epitaxial layer

Indicative range compiled from published technology studies and chemistry; verify against a manufacturer specification before use. 素材計算機で任意の規模に換算して実行 →

輸出規制

支配適用対象
ChinaExport licensing requirement for materials and technologies Antimony (2024), bismuth (2025), synthesized diamond (2025), gallium (2023), germanium (2023), graphite (2023), indium (2025), magnesium materials (2024), molybdenum (2025), rare earths (2025), silver (2026), tellurium (2025), tungsten (2025), and items related to lithium batteries and artificial graphite anode materials (2025).

USGS Mineral Commodity Summaries 2026, table 4 — controls in effect as of January 2026, excluding controls since lifted.

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